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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION *Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -6A *High Switching Speed *Complement to Type 2SC3345 APPLICATIONS *Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A IB B Base Current-Continuous Total Power Dissipation @ TC=25 Junction Temperature -2 A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= -50mA ; IB= 0 IC= -6A; IB= -0.3A B 2SA1328 MIN -50 TYP. MAX UNIT V -0.4 -1.2 -10 -10 70 40 70 320 240 V V A A IC= -6A; IB= -0.3A B VCB= -60V ; IE= 0 VEB= -6V; IC= 0 IC= -1A ; VCE= -1V IC= -6A ; VCE= -1V IC= -1A ; VCE= -5V IE= 0; VCB= -10V; ftest= 1MHz MHz pF Switching Times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3A ,RL= 10, IB1= -IB2= -0.15A,VCC= -30V 0.3 1.0 0.5 s s s hFE-1 Classifications O 70-140 Y 120-240 isc Websitewww.iscsemi.cn 2 |
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